Effect of material parameters on the quantum efficiency of GaInAsSb detectors

Authors
Tian, Y Zhou, TM Zhang, BL Jiang, H Jin, YX
Citation
Y. Tian et al., Effect of material parameters on the quantum efficiency of GaInAsSb detectors, SOL ST ELEC, 43(3), 1999, pp. 625-631
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
3
Year of publication
1999
Pages
625 - 631
Database
ISI
SICI code
0038-1101(199903)43:3<625:EOMPOT>2.0.ZU;2-1
Abstract
In this paper, a theoretical study of the effect of material parameters on the quantum efficiency of a homogeneous GaInAsSb infrared photovolatic dete ctor is presented. The considerations are carried out for the near room tem perature and 2.5 mu m wavelength. The calculated results show that the quan tum efficiency depends strongly on the carrier concentrations in the n- and p-regions. In addition, the absorption coefficient, the surface recombinat ion velocities and the widths of the two regions also effect the quantum ef ficiency. (C) 1999 Elsevier Science Ltd. All rights reserved.