A simple technique for hot-carrier-induced interface state analysis in thin oxide MOS capacitors

A simple technique allowing the determination of the interface trap distrib ution induced by hot carrier injection in MOS capacitors is presented. It i s based on a comparison between capacitance-voltage (C-V-g) measurements be fore and after stress. The procedure can be applied even if the doping prof ile is very abrupt and the stress-induced leakage current very high. In add ition, quantum mechanical effects are properly taken into account. Measurem ents are performed using p-MOS capacitors. Interface state generation after Fowler-Nordheim electron injection is studied. (C) 1999 Elsevier Science L td. All rights reserved.