Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation

Authors
Yeh, KL Jeng, MJ Hwu, JG
Citation
Kl. Yeh et al., Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation, SOL ST ELEC, 43(3), 1999, pp. 671-676
Citations number
34
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
3
Year of publication
1999
Pages
671 - 676
Database
ISI
SICI code
0038-1101(199903)43:3<671:FTGOPB>2.0.ZU;2-#
Abstract
Room temperature deposition in H2SiF6 solution, i.e., liquid phase depositi on (LPD), followed by furnace oxidation (FO) is first used to prepare fluor inated thin oxides (LPD/FO). The amount of fluorine existing in the gate ox ide is controlled by varying the LPD time in this work. A turnaround breakd own behavior is observed for LPD/FO oxides with various LPD conditions. The oxide with an optimized fluorine concentration shows a significant improve ment in oxide breakdown characteristics. (C) 1999 Elsevier Science Ltd. All rights reserved.