Comments on "Normal and anomalous behaviour of the RTS noise amplitude in forward biased in InGaAs/InP photodiodes"

Authors
Vandamme, LKJ
Citation
Lkj. Vandamme, Comments on "Normal and anomalous behaviour of the RTS noise amplitude in forward biased in InGaAs/InP photodiodes", SOL ST ELEC, 43(3), 1999, pp. 691-692
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
3
Year of publication
1999
Pages
691 - 692
Database
ISI
SICI code
0038-1101(199903)43:3<691:CO"AAB>2.0.ZU;2-A
Abstract
The paper "Normal and anomalous behaviour of the RTS noise amplitude in for ward biased in InGaAs/InP photodiodes" presents a study of the RTS noise am plitude in forward biased InGaAs/InP photodetectors. According to the value s of the ideality factor eta(RTS) of the RTS current noise amplitude an ano malous behaviour (eta(RTS)approximate to 0.5) has been observed for the fir st time. Fluctuations in the multicarrier Auger recombination process are a ssumed to be responsible for anomalous RTS with eta(RTS) < 1 Here we demons trate that an RTS type of fluctuation in the series resistance of the diode can explain both eta(RTS)approximate to 0.5 and eta(RTS) = 1. (C) 1999 Els evier Science Ltd. All rights reserved.