A LUMINESCENCE MAPPING TECHNIQUE FOR RAPID EVALUATION OF VISIBLE-LIGHT-EMITTING MATERIALS USED IN SEMICONDUCTOR LIGHT-EMITTING-DIODES

A technique for the rapid evaluation of the optical performance of waf ers grown for fabricating visible-light-emitting diodes (LEDs) is pres ented. The technique is simple, non-destructive and can be used to qua lify wafers prior to the relatively expensive device-processing stage. The technique resolves the problem resulting from the lack of correla tion between photoluminescence measurements on as-grown materials and electroluminescence on the final structures. The lack of such correlat ion has been a pertinent problem for the material growth industry. The materials used for this investigation are those grown specifically fo r the fabrication of high-performance LEDs.