Photorefractive multiple quantum well devices approaching diffraction-limited resolution

We demonstrate that a resolution approaching their fundamental drift-free d iffraction limit can be achieved in photorefractive multiple quantum well ( MQW) devices by proper choice of the growth and anneal conditions. Previous ly reported devices are compared with four MQW samples grown at low tempera ture and annealed after growth at 620 degrees C for over 3 h. A simple anal ytical model with and without lateral drift of photocarriers is used to exp lain the observed experimental resolutions. The growth temperature and anne aling procedure of the low-temperature-grown MQW are shown to significantly influence the device resolution by reducing lateral drift. (C) 1999 Americ an Institute of Physics. [S0003-6951(99)04311-9].