Pressure-induced energy level crossings and narrowing of photoluminescencelinewidth in self-assembled InAlAs/AlGaAs quantum dots

Authors
Phillips, J Bhattacharya, A Venkateswaran, U
Citation
J. Phillips et al., Pressure-induced energy level crossings and narrowing of photoluminescencelinewidth in self-assembled InAlAs/AlGaAs quantum dots, APPL PHYS L, 74(11), 1999, pp. 1549-1551
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
11
Year of publication
1999
Pages
1549 - 1551
Database
ISI
SICI code
0003-6951(19990315)74:11<1549:PELCAN>2.0.ZU;2-V
Abstract
We present a study of the hydrostatic-pressure dependence of the photolumin escence from In0.5Al0.5As/Al0.25Ga0.75As self-assembled quantum dots. Three distinct regions of quantum-dot peak-energy shift with pressure are observ ed and are attributed to energy level crossings and band mixing effects. In addition, a large reduction in photoluminescence linewidth with applied pr essure is noted. (C) 1999 American Institute of Physics. [S0003-6951(99)012 11-5].