90 degrees magneto-optical polar Kerr effect in layered magnetic semiconductor metal structures

Citation
Ya. Uspenskii et Bn. Harmon, 90 degrees magneto-optical polar Kerr effect in layered magnetic semiconductor metal structures, APPL PHYS L, 74(11), 1999, pp. 1618-1620
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
74
Issue
11
Year of publication
1999
Pages
1618 - 1620
Database
ISI
SICI code
0003-6951(19990315)74:11<1618:9DMPKE>2.0.ZU;2-#
Abstract
Using analytical and numerical methods, we show that the polar Kerr rotatio n theta(K) of 90 degrees may be attained in a large class of (magnetic-semi conductor)/metal layered structures just below the absorption edge. The cor responding reflectivity varies over wide limits. For example, in a EuS/Ag m ultilayer with a small period it is of several percent, while in a thick la yer of EuS deposited on Ag it achieves 95%. (C) 1999 American Institute of Physics. [S0003-6951(99)03911-X].