SHORT-TIMESCALE THERMAL MAPPING OF SEMICONDUCTOR-DEVICES

We report spatial mapping of temperature fields in semiconductor devic es with sub-microsecond temporal resolution, The measurements are perf ormed at a facility that integrates scanning laser-reflectance thermom etry with electrical stressing capability, Data for SOI LDMOS transist ors investigate transient heat diffusion within the buried silicon dio xide and capture large temperature gradients in the drift region, whic h result from the spatially-varying impurity concentration, The new th ermometry facility is promising for the study of transistor and interc onnect thermal failure due to electrostatic discharge (ESD).