Ky. Lee et al., THE ELECTROSTATIC CHARGING DAMAGE ON THE CHARACTERISTICS AND RELIABILITY OF POLYSILICON THIN-FILM TRANSISTORS DURING PLASMA HYDROGENATION, IEEE electron device letters, 18(5), 1997, pp. 187-189
In this letter, the impacts of electrostatic charging damage on the ch
aracteristics and gate oxide integrity of polysilicon thin-film transi
stors (TFT's) during plasma hydrogenation were investigated. Hydrogen
atoms can passivate trap states in the polysilicon channel, however, p
lasma processing induced the effect of electrostatic charging damages
the gate oxide and the oxide/channel interface, The passivating effect
of hydrogen atoms is hence antagonized by the generated interface sta
tes, TFT's with different area of antennas were used to study the dama
ges caused by electrostatic field.