50-NM CHANNEL NMOSFET SIMOX WITH AN ULTRATHIN 2-NM OR 6-NM THICK SILICON LAYER AND THEIR SIGNIFICANT FEATURES OF OPERATIONS/

Authors
OMURA Y KURIHARA K TAKAHASHI Y ISHIYAMA T NAKAJIMA Y IZUMI K
Citation
Y. Omura et al., 50-NM CHANNEL NMOSFET SIMOX WITH AN ULTRATHIN 2-NM OR 6-NM THICK SILICON LAYER AND THEIR SIGNIFICANT FEATURES OF OPERATIONS/, IEEE electron device letters, 18(5), 1997, pp. 190-193
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE electron device letters → ACNP
ISSN journal
07413106
Volume
18
Issue
5
Year of publication
1997
Pages
190 - 193
Database
ISI
SICI code
0741-3106(1997)18:5<190:5CNSWA>2.0.ZU;2-5
Abstract
This paper demonstrates mesoscopic scale nMOSFET's fabricated by Separ ation by IMplanted OXygen (SIMOX) technology on a trial basis and desc ribes their explicit quantum-mechanical transport phenomena: enhanced threshold voltage in an extremely thin silicon-on-insulator (SOI) stru cture and enhanced short-channel effect at room temperature as well as a weak interference (WI) effect at relatively high temperatures (simi lar to 40 K), which are characterized specifically in extremely thin S OI short-channel devices.