MONOLITHIC CMOS DIGITAL INTEGRATED-CIRCUITS IN 6H-SIC USING AN IMPLANTED P-WELL PROCESS

We report the first p-well Complementary Metal Oxide Semiconductor (CM OS) digital integrated circuits in 6H-SiC, Enhancement mode NiMOSFET's and PMOSFET's are fabricated on implanted p-wells and n-type epilayer s, respectively. CMOS logic circuits such as inverters, NAND, NOR, XOR , flip-flops, half adders, and 11-stage ring oscillators are implement ed using these devices and operated at room temperature, The inverters show stable operation at room temperature and 300 degrees C with V-dd = 10 and 15 V.