HIGH-TEMPERATURE, HIGH-VOLTAGE OPERATION OF PULSE-DOPED DIAMOND MESFET

The fabrication and operation of a pulse-doped diamond metal-semicondu ctor field-effect transistor (MESFET) is presented showing a usable so urce drain voltage of 70 V and no breakdown up to 100 V at 350 degrees C operating temperature. A channel sheet concentration of 8.5 x 10(12 ) cm(-2) could be fully modulated leading to a maximum transconductanc e of 0.22 mS/mm, although full activation of the boron acceptor had no t been reached, For an optimized device structure, with seduced gate l ength below 0.25 mu m and full activation, more than 10 W/mm RF-power density can be predicted.