ELECTRICAL CHARACTERIZATION OF DIELECTRICALLY ISOLATED SILICON SUBSTRATES CONTAINING BURIED METALLIC LAYERS

Dielectrically isolated substrates containing buried highly conducting WSi2 layers are characterized for the first time using MOS capacitors , The active silicon layer is approximately 3 mu m thick with a buried WSi2 layer 120 mm thick adjacent to the isolation layer, The buried m etal forms the back contact of the capacitor and excellent MOS charact eristics are observed, Minority carrier lifetimes in excess of 200 mu s were measured indicating the suitability of these substrates for use in device manufacture.