Electrical resistivity and thermoelectric power of polycrystalline and amorphous Se-Te-Cu system

Citation
K. Balcerek et al., Electrical resistivity and thermoelectric power of polycrystalline and amorphous Se-Te-Cu system, CRYOGENICS, 38(12), 1998, pp. 1233-1236
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Mechanical Engineering
Journal title
CRYOGENICS
ISSN journal
00112275 → ACNP
Volume
38
Issue
12
Year of publication
1998
Pages
1233 - 1236
Database
ISI
SICI code
0011-2275(199812)38:12<1233:ERATPO>2.0.ZU;2-Y
Abstract
The dark electrical resistivity and thermoelectric power have been measured for the bulk ternary alloy Se-Te-Cu. The samples were both polycrystalline and amorphous in structure. The measurements were carried out below room t emperature. Depending on Cu addition, crystallographic structure, and amorp hous or polycrystalline state, the samples manifested semiconducting or met allic behaviour. The maximum difference in electrical resistivity magnitude was of 14 orders. The activation energy Delta E of charge carriers determi ned for all semiconducting samples ranged from 0.07 to 0.25 eV. An increase in thermoelectric power resulting from the electron-phonon mass enhancemen t was estimated. (C) 1999 Elsevier Science Ltd. All rights reserved.