The hydrogen concentration in diamond films deposited by the microwave plas
ma CVD method was evaluated by elastic recoil detection analysis (ERDA) usi
ng He ion beam. Diamond films with similar to 500 mu m thickness were peele
d off Si substrates and the hydrogen concentration was measured for both gr
owth surface and backside. The hydrogen concentration of the growth surface
was approximately 1.9% against the number of carbon atoms, while that of t
he backside was 6.5%. By grinding both surfaces, the hydrogen concentration
of the growth surface became approximately 2.6%, and that of the backside
4.2%. These results show that the hydrogen measurement by ERDA depends stro
ngly on the surface roughness. In this paper, we also discuss the growth me
chanism at the initial stage of diamond deposition, comparing the hydrogen
concentration of the growth surface and backside of films. (C) 1999 Elsevie
r Science S.A. All rights reserved.