Pm. Menon et al., Filament metal contamination and Raman spectra of hot filament chemical vapor deposited diamond films, DIAM RELAT, 8(1), 1999, pp. 101-109
Chemical vapor deposited diamond films grown in a hot filament reactor usin
g three filament metals (tungsten, tantalum, and rhenium) have been analyze
d for their metal impurity content. This is the first report wherein all th
ree common CVD filament metals have been examined and a single technique us
ed for diamond film analysis. Tungsten carbide filaments yielded the lowest
impurity level (few ppm by mass), whereas rhenium yielded the highest (par
ts per thousand). The effects of filament temperature and addition of ammon
ia or oxygen to the reactant gas mixture were examined. A correlation was o
bserved between the metal content of the product films and their quality, a
s judged using Raman spectroscopy. Films with the highest metal content yie
lded Raman spectra showing the lowest fluorescence background, the smallest
sp(2) carbon contribution, and the narrowest 1332 cm(-1) diamond line. (C)
1999 Elsevier Science S.A.