Direct measurements of heterobarrier leakage current and modal gain in 2.3mu m double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers

Authors
Donetsky, DV Belenky, GL Garbuzov, DZ Lee, H Martinelli, RU Taylor, G Luryi, S Connolly, JC
Citation
Dv. Donetsky et al., Direct measurements of heterobarrier leakage current and modal gain in 2.3mu m double QW p-substrate InGaAsSb/AlGaAsSb broad area lasers, ELECTR LETT, 35(4), 1999, pp. 298-299
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
ELECTRONICS LETTERS
ISSN journal
00135194 → ACNP
Volume
35
Issue
4
Year of publication
1999
Pages
298 - 299
Database
ISI
SICI code
0013-5194(19990218)35:4<298:DMOHLC>2.0.ZU;2-H
Abstract
The heterobarrier hole leakage current and modal gain for GaSb-based lasers have been measured for the first time. It is shown that this leakage curre nt is not a factor limiting high temperature operation of the device. Signi ficant broadening of the optical gain with increasing temperature is demons trated.