M. Tanemura et al., ANGULAR-DISTRIBUTION OF IN AND P PARTICLES SPUTTERED FROM INP BY INERT-GAS ION-BOMBARDMENT, Surface science, 376(1-3), 1997, pp. 163-168
An InP(100) surface was bombarded with 1 and 3 keV Ar+ and Xe+ ions at
normal incidence in ultra-high vacuum at 153 and 293 K. We determined
the angular distributions of sputtered In and P particles using a col
lection method. The surfaces sputtered at 153 K were free of cones, ir
respective of ion species and energy. The angular distribution of In w
as almost identical with that of P at 153 K. This strongly suggests th
at no radiation-enhanced Gibbsian segregation occurred at this tempera
ture in the surface region, where the in-depth composition is almost h
omogeneous. In contrast, a preferential ejection of In in the oblique
direction was observed for samples bombarded with 3 keV ions at 293 K,
where the surface was flatly eroded. We thus conclude that the outerm
ost layer of the sample sputtered at 293 K is enriched with In. (C) 19
97 Elsevier Science B.V.