Sputter deposition for semiconductor manufacturing

Authors
Citation
Sm. Rossnagel, Sputter deposition for semiconductor manufacturing, IBM J RES, 43(1-2), 1999, pp. 163-179
Citations number
30
Categorie Soggetti
Multidisciplinary,"Computer Science & Engineering
Journal title
IBM JOURNAL OF RESEARCH AND DEVELOPMENT
ISSN journal
00188646 → ACNP
Volume
43
Issue
1-2
Year of publication
1999
Pages
163 - 179
Database
ISI
SICI code
0018-8646(199901/03)43:1-2<163:SDFSM>2.0.ZU;2-E
Abstract
Sputter deposition, also known as physical vapor deposition, or PVD, is a w idely used technique for depositing thin metal layers on semiconductor wafe rs. These layers are used as diffusion barriers, adhesion or seed layers, p rimary conductors, antireflection coatings, and etch stops. With the progre ssion toward finer topographical dimensions on wafers and increasing aspect patios, the broad angular distribution of depositing, sputtered atoms lead s to poor or nonexistent coverage in deep features. This has been partially addressed using directional sputtering techniques such as collimated sputt ering or long-throw sputtering, More recently, work originating in IBM has moved toward the deposition of films from metal-rich plasmas fed by sputter ing, a technique known as I-PVD (for ionized PVD), This technique, based on fairly minor modifications of existing PVD systems, solves many of the int rinsic problems of PVD and appears headed for widespread manufacturing appl ications.