Structural and electrical properties of sol-gel synthesized PLZT thin films

Authors
Vijayaraghavan, C Goel, TC Mendiratta, RG
Citation
C. Vijayaraghavan et al., Structural and electrical properties of sol-gel synthesized PLZT thin films, IEEE DIELEC, 6(1), 1999, pp. 69-72
Citations number
18
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON DIELECTRICS AND ELECTRICAL INSULATION
ISSN journal
10709878 → ACNP
Volume
6
Issue
1
Year of publication
1999
Pages
69 - 72
Database
ISI
SICI code
1070-9878(199902)6:1<69:SAEPOS>2.0.ZU;2-N
Abstract
Thin films of PLZT with PbTiO3 interlayers have been fabricated by using a sol-gel spin-on process. Three compositions of PLZT, namely 8/65/35, 15/40/ 60 and 18/30/70, have been deposited on platinum and quartz substrates and heat treated at 650 degrees C. All three compositions have crystallized in the perovskite phase. The 8/65/35 composition, which has been investigated in greater detail exhibits a low value of leakage current. It also exhibits polarization hysteresis, with E-c = 20 kV/cm and P-r = 25 mu C/cm(2).