Potential distributions through an annular aperture with a floating inner conductor

Authors
Citation
Hs. Lee et Hj. Eom, Potential distributions through an annular aperture with a floating inner conductor, IEEE MICR T, 47(3), 1999, pp. 372-374
Citations number
5
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
ISSN journal
00189480 → ACNP
Volume
47
Issue
3
Year of publication
1999
Pages
372 - 374
Database
ISI
SICI code
0018-9480(199903)47:3<372:PDTAAA>2.0.ZU;2-Y
Abstract
The potential distributions through an annular aperture in a thick conducti ng plane are considered when an inner conductor is electrically floating, T he charge conservation is used to relate the potential in terms of the tota l charge on an inner conductor. Numerical calculations are performed to ill ustrate the behavior of potential distribution, capacitances, and polarizab ilities in terms of the aperture geometry and incident field.