Choosing a thermal model for electrothermal simulation of power semiconductor devices

Citation
A. Ammous et al., Choosing a thermal model for electrothermal simulation of power semiconductor devices, IEEE POW E, 14(2), 1999, pp. 300-307
Citations number
12
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
IEEE TRANSACTIONS ON POWER ELECTRONICS
ISSN journal
08858993 → ACNP
Volume
14
Issue
2
Year of publication
1999
Pages
300 - 307
Database
ISI
SICI code
0885-8993(199903)14:2<300:CATMFE>2.0.ZU;2-9
Abstract
The literature proposes some thermal models needed for the electrothermal s imulation of power electronic systems, This paper gives a useful analysis a bout the choice of the thermal model circuit networks, equivalent to a disc retization of the heat equation by the finite difference method (FDM) and t he finite-element method (FEM), and an analytic model developed by applying an internal approximation of the heat diffusion problem, The effect of the boundary condition representation and the introduced errors on temperature response at the heat source are studied. This study is advantageous, parti cularly for large surges of a short time duration.