Ionization of trimethylsilane, (CH3)(3)SiH

Citation
Cq. Jiao et al., Ionization of trimethylsilane, (CH3)(3)SiH, INT J MASS, 184(1), 1999, pp. 83-88
Citations number
12
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences
Journal title
INTERNATIONAL JOURNAL OF MASS SPECTROMETRY
ISSN journal
13873806 → ACNP
Volume
184
Issue
1
Year of publication
1999
Pages
83 - 88
Database
ISI
SICI code
1387-3806(19990315)184:1<83:IOT(>2.0.ZU;2-0
Abstract
Cross sections for electron impact ionization of trimethylsilane from thres hold to 70 eV have been measured using Fourier transform mass spectrometry. High resolution mass spectra show that the parent ion Si(CH3)(3)H+ is not formed by electron impact. Only one of the 15 ions produced by dissociative ionization lacks a silicon atom. The total ionization cross section is 1.5 X 10(-15) cm(2) at 70 eV.(CH3)(2)SiH+ and (CH3)(3)Si+ comprise over half o f the ions produced by electron impact, but charge transfer reactions of (C H3)(2)SiH+ and lighter ions yield (CH3)(3)Si+ at pressure-time product in t he 10(-7) Torr s range. The implication of this ion chemistry is that ion f luxes to the walls of trimethylsilane plasmas are predominantly (CH3)(3)Si. (Int J Mass Spectrom 184 (1999) 83-88) (C) 1999 Elsevier Science B.V.