In this paper, we investigate the effects of internal pressure an various c
olossal magnetoresistance materials. By substituting a smaller ion for a la
rger ion, one can exert the lattice pressure to the crystal structures and,
hence, changes the physical properties of these materials. Since the chara
cteristic of the perovskite oxides is a layered structure, the created stra
ins owing to the substitutions are mostly anisortropy and the resulting cha
nges are presumably complicated. We have found that the substitutions can f
ine-tune the electronic structures of various materials and can result in m
any interesting phenomena.