Out-of-plane and in-plane conduction in insulating and strongly underdopedcuprates

Citation
Cc. Almasan et al., Out-of-plane and in-plane conduction in insulating and strongly underdopedcuprates, INT J MOD B, 12(29-31), 1998, pp. 3203-3206
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
INTERNATIONAL JOURNAL OF MODERN PHYSICS B
ISSN journal
02179792 → ACNP
Volume
12
Issue
29-31
Year of publication
1998
Pages
3203 - 3206
Database
ISI
SICI code
0217-9792(199812)12:29-31<3203:OAICII>2.0.ZU;2-V
Abstract
We report measurements of out-of-plane (rho(c)) and in-plane (rho(ab)) norm al-state resistivities of single crystals of insulating PrBa2Cu3O7-delta an d strongly underdoped oxygen deficient YBa2Cu3O6.41 using a flux transforme r method. In the superconducting specimens, the onset of superconductivity was suppressed by a magnetic field of 9 T. We have found that the anisotrop y rho(c)/rho(ab) of these samples increases monotonically at low temperatur es with no signs of saturation. The temperature dependence of rho(c)/rho(ab ) for YBa2Cu3O6.41 is well described by rho(c)/rho(ab) = a + bT(-2/3), but over a smaller temperature range than for insulating PrBa2Cu3O7-delta. Both the absence of saturation of rho(c)/rho(ab) and its T-2/3 dependence indic ate two-dimensional conduction. This means that the average in-plane hoppin g distance of the localized charge carriers increases with decreasing T acc ording to Mott's (R) over bar similar to T-1/3 law, while the elementary st ep in the c-direction remains T independent, equal to the spacing between t he bilayers.