Spin-dependence of the electron scattering cross section by a magnetic layer system and the magneto-resistance

We present a theoretical model for calculating the spin-dependent cross sec tion of the scattering of electrons by a magnetic layer system. Our model d emonstrates that the cross sections of the scattering are different for spi n up and spin down electrons. The model assumes that the electrical resisti vity in a conductor is proportional to the scattering cross section of the electron in it. It is believed to support the two channel mechanism in inte rpreting magneto-resistance (MR). Based on the model without considering th e scattering due to the interfacial roughness and the spin flipping scatter ing, we have established a relationship between MR and the square of the ma gnetic moment in the bulk sample without considering the scattering due to the interfacial roughness and the spin flipping scattering. It can also qua litatively explain the MR difference between the current in plane (CIP) and current perpendicular to the plane (CPP) configurations. The predictions b y the model agree well with the experimental findings.