This paper describes a novel method for transfer and assembly of microstruc
tures using sacrificial-layer micromachining and flip-chip bonding. The tec
hnique is performed at room temperature (cold weld) and at the back end of
the process how and may thus provide a commercially viable alternative to m
onolithic integration and costly hybrid packages. The transfer is achieved
using break-away tethers and by cold melding (compression bonding) electrop
lated indium solder bumps to electroplated copper pads. Both high-aspect-ra
tio MEMS devices as well as surface-micromachined devices have been success
fully transferred using this method with no observable misalignment between
moving and stationary parts. The maximum tensile and shear stress the sold
er bond can withstand before failure is measured to be 11 +/- 3 MPa and 9 /- 1 MPa, respectively, The contact resistance is measured to be of the ord
er of 1.5 m Omega for a 65 mu m x 65 mu m x 4-mu m indium bump. [317].