Photolysis of Disilane at 193 nm

Citation
N. Tada et al., Photolysis of Disilane at 193 nm, J PHYS CH A, 103(2), 1999, pp. 322-329
Citations number
29
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF PHYSICAL CHEMISTRY A
ISSN journal
10895639 → ACNP
Volume
103
Issue
2
Year of publication
1999
Pages
322 - 329
Database
ISI
SICI code
1089-5639(19990114)103:2<322:PODA1N>2.0.ZU;2-S
Abstract
The primary photochemical process of Si2H6 at 193 nm has been studied by us ing time-resolved mass spectrometry and laser-induced fluorescence (LIF) te chniques. Si Hr was confirmed as a primary photoproduct, but no signal due to SiH3, Si2H3, Si2H4 and Si2H5 in 193 nm photolysis has been detected. SiH 2 was observed in a pump-and-probe experiment by the LIF method, which rapi dly reacts with the Si2H6 parent molecule to form Si3H8. The quantum yield of Si3H8 produced in the reaction of SiH2 + Si2H6 was estimated to be 0.13 +/- 0.02 by using electron impact mass spectrometry. It was concluded that SiH2 produced by the photolysis exclusively reacted with Si2H6 and thus the quantum yield of SiH2 was equal to that of Si3H8, i.e., 0.13. The quantum yield of H atom was estimated to be 0.09 +/- 0.01 by using vacuum ultraviol et (VUV) LIF. On the basis of the existing data and present results, it was suggested that the H? molecule production channels are dominant in 193 nm photolysis of Si2H6.