The electrochemical impedance of one-equivalent electrode processes at dark semiconductor/redox electrodes involving charge transfer through surface states. 2. The n-GaAs/Fe3+ system as an experimental example

Authors
Citation
Z. Hens et Wp. Gomes, The electrochemical impedance of one-equivalent electrode processes at dark semiconductor/redox electrodes involving charge transfer through surface states. 2. The n-GaAs/Fe3+ system as an experimental example, J PHYS CH B, 103(1), 1999, pp. 130-138
Citations number
18
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF PHYSICAL CHEMISTRY B
ISSN journal
15206106 → ACNP
Volume
103
Issue
1
Year of publication
1999
Pages
130 - 138
Database
ISI
SICI code
1520-6106(19990107)103:1<130:TEIOOE>2.0.ZU;2-I
Abstract
In this paper, an electrochemical study of the n-GaAs/Fe3+ system is presen ted. Combining the results of current density vs potential, Mott-Schottky, and electrochemical impedance measurements, it is shown that charge transfe r through surface states is the most plausible reaction mechanism for the F e3+ to Fe2+ reduction at the n-GaAs electrode. On the basis of the experime ntal impedance spectra and of the theoretical equivalent circuit derived in part 1 (Hens, Z. J. Phys. Chem. 1998, 103, 122), the charge-transfer mecha nism is analyzed in detail. The Fe3+ reduction rate shows a marked evolutio n as a function of time which, basing upon the electrochemical impedance re sults, is attributed to an increase in the number of surface states.