On the glass formation in the semiconducting GeSe2-Sb2Se3-ZnTe, As2Se3-Sb2Se3-ZnSe and GeSe2-ZnTe-ZnSe systems

Authors
Boycheva, SV Vassilev, VS Ivanova, ZG
Citation
Sv. Boycheva et al., On the glass formation in the semiconducting GeSe2-Sb2Se3-ZnTe, As2Se3-Sb2Se3-ZnSe and GeSe2-ZnTe-ZnSe systems, J PHYS D, 32(4), 1999, pp. 529-532
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
32
Issue
4
Year of publication
1999
Pages
529 - 532
Database
ISI
SICI code
0022-3727(19990221)32:4<529:OTGFIT>2.0.ZU;2-B
Abstract
The glass-forming regions in the GeSe2-Sb2Se3-ZnTe, As2Se3-Sb2Se3-ZnSe and GeSe2-ZnTe-ZnSe chalcogenide systems have been determined. The temperatures of phase transformations (the glass transition, crystallization and meltin g), the density and the microhardness have been studied. The crystalline ph ases which can be formed in these glasses have been specified. The establis hed correlation between the properties and the composition has been explain ed with respect to the specific roles of the compounds involved. The result s obtained have been compared with those for the similar ternary GeSe2-Sb2S e3-ZnSe system.