Interface-related restriction to potential depth estimates for single Si/SiO2 quantum wells

Authors
de Sousa, JS Farias, GA Freire, VN da Silva, EF
Citation
Js. De Sousa et al., Interface-related restriction to potential depth estimates for single Si/SiO2 quantum wells, J PHYS-COND, 11(8), 1999, pp. 1927-1934
Citations number
43
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
11
Issue
8
Year of publication
1999
Pages
1927 - 1934
Database
ISI
SICI code
0953-8984(19990301)11:8<1927:IRTPDE>2.0.ZU;2-P
Abstract
We compare the difference between the energy levels of electrons and holes in single Si/SiO2 quantum wells calculated within an abrupt-interface pictu re and by considering the existence of few SiOx interfacial monolayers at t he well borders. Our results indicate a strong interface-related restrictio n to potential depth estimates for actual single Si/SiO2 quantum wells base d on explaining experimental data with a finite-square-quantum-well model. Overestimation of the potential depth by as much as 2.1 eV and 3.1 eV for e lectrons and holes, respectively, may result.