The full-potential linearized APW (FLAPW) method is employed to find out ef
fects of introducing the self-interaction correction (SIC) on the band stru
cture, the Fermi surface geometry, electron wavefunctions and Compton profi
les. Introduction of the SIC lowers and narrows the d bands. As the results
, the theoretical Compton profiles are brought into a better agreement with
the experimental profiles on one hand, and the area of the Fermi surface n
eck at the L point becomes too small to explain the dHvA result on the othe
r hand.