Growth conditions, electrical resistivity, microhardness and thermal properties of PrRh4.8B2 single crystals synthesized from high-temperature coppersolutions

Citation
S. Okada et al., Growth conditions, electrical resistivity, microhardness and thermal properties of PrRh4.8B2 single crystals synthesized from high-temperature coppersolutions, J CERAM S J, 107(2), 1999, pp. 184-186
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE CERAMIC SOCIETY OF JAPAN
ISSN journal
09145400 → ACNP
Volume
107
Issue
2
Year of publication
1999
Pages
184 - 186
Database
ISI
SICI code
0914-5400(199902)107:2<184:GCERMA>2.0.ZU;2-5
Abstract
PrRh4.8B2 single crystals were prepared from high temperature copper soluti ons by slow cooling method, using praseodymium tips, rhodium powders and bo ron powders as starting materials under helium flow. PrRh4.8B2 belongs to t he orthorhombic system with the space group Fmmm; a=0.9697(4)nm, b=0.5577(2 ) nm and c=2.564(3)nm. Vickers microhardness and electrical resistivity of the compound were measured, and oxidation resistivity of the compound at hi gh temperature in air was studied. Vickers microhardness (H-V) and the elec trical resistivity (rho) value on (001) plane with the orthorhombic system of PrRh4.8B2 were in the range of H-V = 6.12-7.32 GPa and rho = 670 x 10(-6 ) Omega.cm, respectively. The oxidation in air of PrRh4.8B2 crystals began to proceed at about 590 degrees C. Weight gain of the sample heated up to 1 200 degrees C in air is 13% and the identified oxidation product consisted of the PrBO3 (orthorhombic) and Rh (cubic).