Various factors influencing the kinetics of charge transfer processes
at semiconductor electrodes are described. The investigations were res
tricted to the transfer of majority carriers because the corresponding
currents are potential dependent which gives valuable information on
the rate determining steps. Current-potential curves as obtained by va
rious authors are analyzed in terms of theoretical models for charge t
ransfer processes at semiconductor electrodes. Only in few cases do th
e current potential curves exhibit a slope of 60 mV/decade predicted t
heoretically. Examples are selected redox reactions at ZnO, GaAs and W
Se2 electrodes. The origin of the deviations from an ideal behaviour i
s still not clear. Various authors explain the deviations by assuming
an electron transfer via surface states. Crystalline steps at the surf
ace do not play an essential role. In the case of an ideal behaviour o
f the current potential curve a second order rate constants in the ord
er of 10(-17) cm(4) s(-1) and higher have been determined. Interesting
ly, extremely high rates of k > 10(-12) cm(4) s(-1) have been found fo
r the reduction of protons at n-GaAs electrodes. In this case the over
all rate was not determined by the surface kinetics but by the transpo
rt of electrons through the space charge region toward the surface.