Computer modelling of slip in TiC

Citation
Rm. Harris et Pd. Bristowe, Computer modelling of slip in TiC, PHIL MAG A, 79(3), 1999, pp. 705-721
Citations number
28
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS ANDMECHANICAL PROPERTIES
ISSN journal
13642804 → ACNP
Volume
79
Issue
3
Year of publication
1999
Pages
705 - 721
Database
ISI
SICI code
1364-2804(199903)79:3<705:CMOSIT>2.0.ZU;2-K
Abstract
We have performed computer simulations based on tight binding to determine the probable dislocation dissociation reactions that will occur, and the pr eferred slip system, of TiC1.0 at 0 K. By calculating the barrier to the di ffusion of carbon atoms in different directions, and by considering the eff ect of changes in local stoichiometry, we have produced a model for the def ormation behaviour as a function of temperature. We find that, as observed experimentally, {110}[110] slip is preferred at low temperatures. At interm ediate temperatures in nonstoichiometric TiC we confirm that dislocations o n {111} with Burgers vectors of (a/2)[1 (1) over bar 0] will dissociate to form so-called 'synchro-partials', which will slip in preference to perfect dislocations on {110}. At high temperatures we predict that diffusion will result in {111} planes denuded of carbon on which the glide of Shockley pa rtial dislocations will form the favoured slip system.