Correlation between electric force microscopy and scanning electron microscopy for the characterization of percolative conduction in electronic devices

The correlation between electric force microscopy (EFM) and scanning electr on microscopy (SEM) techniques provided interpretation of the contrast feat ures of electric force images and gave an insight into the two-dimensional (2D) electrical transport properties of RuO2-based thick film resistors (TF Rs). From the comparison between EFM, tapping-mode atomic force microscopy, SEM (secondary electrons, specimen current and X-ray energy-dispersive spe ctroscopy) of TFRs on the same specimen area, it turned out that the conduc tion mechanism was related to the grain size and to how RuO2 crystals were distributed in the glassy matrix. Dark areas in EFM images corresponded to conductive-insulating interfaces. In SEM the same areas were the interfaces between the RuO2 crystals and the insulating matrix. The 2D percolative pa th of the electrical current near the surface was observed in connection wi th the net of RuO2 grains not homogeneously dispersed in the insulating mat rix.