Cathodoluminescence and crystal growth of sapphire

Citation
R. Chapoulie et al., Cathodoluminescence and crystal growth of sapphire, PHYS ST S-A, 171(2), 1999, pp. 613-621
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
171
Issue
2
Year of publication
1999
Pages
613 - 621
Database
ISI
SICI code
0031-8965(19990216)171:2<613:CACGOS>2.0.ZU;2-S
Abstract
Even though the luminescence process in sapphire has been widely investigat ed, the relation between the presence of specific impurities such as titani um and iron, and the way the crystal grows up, is enlightened here thanks t o the cathodoluminescence (CL) approach. The role of each impurity, laking into account its different valence states and the correlation between all t he possible ions, i.e. Ti4+, Ti3+, Fe3+, and Fe2+ is tentatively explained: Ti4+ will act as a blue emitting centre, Ti3+ as a red one in a complex lu minescence process, while Fe2+ will act as a quenching centre. Thus, the cr ystal growth process, Verneuil process, can be totally described as for the distribution of the impurities needed to generate the sapphires. Particula rly, growth bands find an explanation regarding these distributions of iron and titanium in their different valence states.