An analysis of the mobility of holes in p-type SiGe quantum wells using multiple scattering theory

Authors
Kearney, MJ Horrell, AI
Citation
Mj. Kearney et Ai. Horrell, An analysis of the mobility of holes in p-type SiGe quantum wells using multiple scattering theory, SEMIC SCI T, 14(3), 1999, pp. 211-214
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
14
Issue
3
Year of publication
1999
Pages
211 - 214
Database
ISI
SICI code
0268-1242(199903)14:3<211:AAOTMO>2.0.ZU;2-9
Abstract
The low-temperature mobility of holes in an SiGe quantum well is analysed u sing a theory that goes beyond lowest order in the scattering by treating m ultiple scattering in a self-consistent fashion. At small. carrier concentr ations the mobility is reduced by multiple scattering compared with lowest- order theory, a precursor to strong localization. The validity of using low est-order theory to extract technologically important material parameters i s discussed.