Mj. Kearney et Ai. Horrell, An analysis of the mobility of holes in p-type SiGe quantum wells using multiple scattering theory, SEMIC SCI T, 14(3), 1999, pp. 211-214
The low-temperature mobility of holes in an SiGe quantum well is analysed u
sing a theory that goes beyond lowest order in the scattering by treating m
ultiple scattering in a self-consistent fashion. At small. carrier concentr
ations the mobility is reduced by multiple scattering compared with lowest-
order theory, a precursor to strong localization. The validity of using low
est-order theory to extract technologically important material parameters i
s discussed.