Electrical study of the Au/InSb/InP system

In this work, we have studied the dominant transport mechanism in an Au/InS b/InP diode. The InP (n) substrate is restructured with some monolayers of an InSb thin film. The structures have been characterized electrically and the C(V) and I(V) curves have been plotted. The saturation current I-s, the serial resistance R-s and the mean ideality factor n were calculated using the I(V) characteristics and are respectively equal to 2.05 x 10(-5) A, 85 Omega and 1.7. Thus, the doping level N-d and diffusion voltage V-d were d educed from the C(V) curves and are evaluated to N-d = 3 X 10(15) cm(-3) an d V-d = 0.337 V. The analysis of I(V) and C(V) characteristics allows us to determine that t he mean interfacial density of states N-ss and the transmission coefficient theta(n) are respectively equal to 4.33 x 10(12) cm(-2) eV(-1) and 4.08 x 10(-3) The presence of deep discrete donor levels in the semiconductor bulk and/or the distributed density of states N-ss is responsible for the nonlinearity of the C-2 (V) characteristic because the C(V) curve is controlled by two donor levels located at 0.76 eV and 1.02 eV relative to the conduction band edge E-c.