Generation-recombination noise in MOSFETs

A new analytical approach to the low frequency noise analysis in MOSFETs ha s been developed. Local levels contributing to generation-recombination noi se are classified into three groups. For deep levels located near the midgap the approach of zero free carrier c oncentration inside the space charge region can be used. Simple analytical expressions and conditions of their applicability are derived. Parameters of levels located near the conduction and valence bands can be d etermined analytically. Analytical expressions for such a situation are als o derived. For the intermediate case the level parameters can be only deter mined numerically. The low frequency noise in nand p-MOSFETs has been studi ed experimentally at 220 K < T < 425 K over frequency range 2 Hz < f < 10(5 ) Hz. Experimental noise spectra are analysed on the basis of developed the oretical model.