ON THE APPLICABILITY OF DEEP-LEVEL TRANSIENT SPECTROSCOPY FOR THE INVESTIGATION OF DEEP CENTERS IN SILICON CREATED BY FAST-NEUTRON IRRADIATION

Authors
HARDALOV CM STEFANOV KD SUEVA D
Citation
Cm. Hardalov et al., ON THE APPLICABILITY OF DEEP-LEVEL TRANSIENT SPECTROSCOPY FOR THE INVESTIGATION OF DEEP CENTERS IN SILICON CREATED BY FAST-NEUTRON IRRADIATION, Applied physics A: Materials science & processing, 61(2), 1995, pp. 107-109
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics A: Materials science & processing → ACNP
ISSN journal
09478396
Volume
61
Issue
2
Year of publication
1995
Pages
107 - 109
Database
ISI
SICI code
0947-8396(1995)61:2<107:OTAODT>2.0.ZU;2-N
Abstract
Deep-Level Transient Spectroscopy (DLTS) measurements were carried out on silicon p(+)nn(+) diodes before and after irradiation with fast ne utrons at room temperature with fluences 5.5 x 10(11) and 1.0 x 10(12) n/cm(2). It was found out, that all preexisting defects decreased the ir amplitudes during irradiation, while only one defect, identified as a single-charged divacancy, increased in amplitude. An interpretation is proposed in terms of the cluster model, and the applicability of t he DLTS is discussed.