Acoustic emission in dislocation-containing silicon exposed to current andthermal influences

An investigation was made of acoustic emission in silicon single crystals d uring passage of an electric current. It was observed that in the temperatu re range studied (T=300-450 K) acoustic emission signals whose intensity in creases with increasing dislocation density are excited in a static electri c field. The acoustic emission of silicon single crystals with and without dislocations is compared. It is assumed that the acoustic emission in silic on is caused by the unpinning and migration of dislocations under the influ ence of the direct electric current and thermoelastic stresses. The activat ion energy of this process is estimated as E = 0.53+/- 0.05 eV during passa ge of a direct current of density j = 2.8 x 10(5) A/m(2). (C) 1999 American Institute of Physics. [S1063-7850(99)00502-9].