CuInSe2 films produced by graphite box annealing of multilayer precursors

Authors
Kundu, SN Basu, M Chaudhuri, S Pal, AK
Citation
Sn. Kundu et al., CuInSe2 films produced by graphite box annealing of multilayer precursors, THIN SOL FI, 339(1-2), 1999, pp. 44-50
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
339
Issue
1-2
Year of publication
1999
Pages
44 - 50
Database
ISI
SICI code
0040-6090(19990208)339:1-2<44:CFPBGB>2.0.ZU;2-O
Abstract
Copper indium diselenide films were prepared by graphite box annealing of s tacked elemental layer (SEL) precursors. Effects of annealing temperature a nd ambient atmosphere on the microstructural, optical and electrical proper ties were studied critically. Pt measurements were also carried out to find information on the defect levels. From the above studies, the optimum cond ition for the deposition of high quality CuInSe2 films by this technique wa s determined. (C) 1998 Elsevier Science S.A. All rights reserved.