Characterization of laser ablated silicon thin films

Citation
S. Viayalakshmi et al., Characterization of laser ablated silicon thin films, THIN SOL FI, 339(1-2), 1999, pp. 102-108
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
339
Issue
1-2
Year of publication
1999
Pages
102 - 108
Database
ISI
SICI code
0040-6090(19990208)339:1-2<102:COLAST>2.0.ZU;2-4
Abstract
Using laser ablation, we deposited silicon layers consisting of clusters an d crystalline domains onto glass, quartz, aluminum, titanium, copper, singl e-crystal silicon and single-crystal potassium bromide substrates. The micr ostructure and the morphology of the films were characterized by use of opt ical microscopy, laser scanning microscopy, atomic force microscopy, transm ission electron microscopy, micro-Raman spectroscopy, X-ray photoelectron s pectroscopy and X-ray diffraction. The results indicated that the deposited material wets composed of microcrystalline droplets, typically 3.5 mu m in diameter, separated by amorphous-like regions. The droplets were composed of crystalline material at their centers and an outer halo of nanometer-siz e particles. (C) 1999 Elsevier Science S.A. All rights reserved.