AlN films grown by electric field induced flux of Al cations

Authors
Johnson, MT Carter, CB
Citation
Mt. Johnson et Cb. Carter, AlN films grown by electric field induced flux of Al cations, THIN SOL FI, 339(1-2), 1999, pp. 117-119
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
339
Issue
1-2
Year of publication
1999
Pages
117 - 119
Database
ISI
SICI code
0040-6090(19990208)339:1-2<117:AFGBEF>2.0.ZU;2-9
Abstract
Thin films of aluminum nitride (AlN) have been grown on (0001) oriented sap phire (alpha-Al2O3) substrates through the use of an externally applied ele ctric field. By applying an electric field with an appropriate electrode ma terial, at elevated temperatures, across Al2O3, a flux of Al3+ cations towa rd the cathode was induced. The cations arriving at the surface of the Al2O 3 then reacted with a nitrogen gas atmosphere to form a thin epitactic film of AlN on the Al2O3. (C) 1999 Elsevier Science S.A. All rights reserved.