Crystallization behavior of rf-sputtered TiNi thin films

Amorphous thin films of Ti45.6Ni54.4 and Ti-50.4 Ni-49.6 alloys were deposi ted onto 3 inch diameter n-type (100)Si wafer by r.f. magnetron sputtering. The activation energy from an amorphous state to crystallization of the Ti 45.6Ni54.4 free-standing thin him was found to be 385 kJ mol(-1) by Avrami' s method and 374 kJ mol(-1) by Kissinger's method. The values of Avrami exp onents are 2.56, 2.65, 2.7, and 3 far isothermal annealing temperatures of 527, 532, 542, and 547 degrees C respectively. The activation energy for th e crystallization process of Ti50.4Ni49.6 film-on-substrate is estimated as 287.6 kJ mol(-1) from X-ray diffraction experiment. This value is much sma ller than those from Avrami's or Kissinger's methods owing to the effects o f the residual compression stress on time thin film and the volume reductio n after crystallization. (C) 1999 Elsevier Science S.A. All rights reserved .