Growth of AlN films using hydrazidoalane single-source precursors

Aluminum nitride (AIN) films were grown on Si(100) and S(111) substrates by a low-pressure chemical vapor deposition method in the temperature range 4 00-800 degrees C using two hydrazidoalane dimers, [Me2Al-mu-N(H)NMe2](2) (1 ) and [Et2Al-mu-N(H)NMe2](2) (2) as single-source precursors. Polycrystalli ne AlN films were obtained on Si(111) at 800 degrees C from precursor 1. Am orphous AlN films were observed under certain growing conditions, such as o n Si(100) substrates from precursor 2, or at lower temperatures. The films were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy. (C) 1999 Elsevier Science S.A. All rights reserved.