The crystal structure of CdS-CdTe thin film heterojunction solar cells

Citation
Kd. Rogers et al., The crystal structure of CdS-CdTe thin film heterojunction solar cells, THIN SOL FI, 339(1-2), 1999, pp. 299-304
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
00406090 → ACNP
Volume
339
Issue
1-2
Year of publication
1999
Pages
299 - 304
Database
ISI
SICI code
0040-6090(19990208)339:1-2<299:TCSOCT>2.0.ZU;2-T
Abstract
A detailed structural analysis of electrodeposited CdS-CdTe thin him hetero junction solar cells was undertaken. X-ray diffraction and Rutherford backs cattering spectrometry were used to provide stoichiometric and microcrystal line data at increasing depths through the CdTe and CdS films. A model of t he nature and extent of interdiffusion caused by a post deposition anneal i s developed ii region in both preannealed and post-annealed samples which p ossesses a significantly different microstructure to that of the bulk CdTe, was identified. Within this region a stoichiometric gradient occurs and th e grain size and preferred orientation decrease with increasing depth. Maxi mum CdTe film stress (post anneal) is estimated to be 140 MPa close to the interface and a shift in optical band gap of 6 x 10(-3) eV was also determi ned from structural measurements. We provide evidence that sulphur diffusio n into CdTe is structurally rather than thermodynamically Limited within th ese systems. (C) 1999 Elsevier Science S.A. All rights reserved.