A detailed analysis of PhotoLuminescence spectroscopy (PL) on undoped
and Te- and Zn-doped samples of high-quality GaSb is presented. Temper
ature variations of PL peak position and intensity have been used to f
ind the origin of various transitions. The PL peaks of undoped samples
have been assigned to unintentional impurities, native defects and ex
citons bound to the defect. The zinc- and tellurium-related peaks have
been identified and the effect of doping concentration on their posit
ion and PL efficiency have been studied.