PHOTOLUMINESCENCE STUDIES IN BULK GALLIUM ANTIMONIDE

Citation
Ps. Dutta et al., PHOTOLUMINESCENCE STUDIES IN BULK GALLIUM ANTIMONIDE, Applied physics A: Materials science & processing, 61(2), 1995, pp. 149-152
Citations number
17
Categorie Soggetti
Physics, Applied
ISSN journal
09478396
Volume
61
Issue
2
Year of publication
1995
Pages
149 - 152
Database
ISI
SICI code
0947-8396(1995)61:2<149:PSIBGA>2.0.ZU;2-M
Abstract
A detailed analysis of PhotoLuminescence spectroscopy (PL) on undoped and Te- and Zn-doped samples of high-quality GaSb is presented. Temper ature variations of PL peak position and intensity have been used to f ind the origin of various transitions. The PL peaks of undoped samples have been assigned to unintentional impurities, native defects and ex citons bound to the defect. The zinc- and tellurium-related peaks have been identified and the effect of doping concentration on their posit ion and PL efficiency have been studied.